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SHINDENGEN
Schottky Rectifiers (SBD)
Single
DE5S6M
60V 5A
FEATURES *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication
OUTLINE DIMENSIONS
Case : E-pack
Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified T=25*Z) Item Symbol Conditions Ratings Unit Tstg -40*150 *Z Storage Temperature Operating Junction Temperature Tj 150 *Z 60 V Maximum Reverse Voltage V RM VVoltage width 0.5ms, duty1/40 65 V Repetitive Peak Surge ReverseRRSM Pulse Average Rectified Forward Current 50Hz sine wave, R-load, Tc=96*Z* On alumina substrate IO @ 5 A 2.6 50Hz sine wave, R-load, Ta=45*Z*@On glass-epoxy substrate Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z A 90 P Power 330 W Repetitive Peak Surge ReverseRRSM Pulse width 10Es, Tj=25*Z *oeElectrical Characteristics (If not specified T=25*Z) Item Symbol Conditions V IF Forward Voltage F =5A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Cj f=1MHz,=10V Junction Capacitance RV AEjc junction to case Thermal Resistance AEja junction to ambient Ratings Unit Max.0.58 V Max.2.5 mA Typ.200 pF Max.12 *Z/W Max.55
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
DE5S6M
Forward Voltage
10
Forward Current IF [A]
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
DE5S6M
Junction Capacitance
f=1MHz Tc=25C TYP per diode
1000
Junction Capacitance Cj [pF]
100
0.1
1
10
Reverse Voltage VR [V]
DE5S6M
1000
Reverse Current
Tc=150C [MAX]
100
Tc=150C [TYP]
Tc=125C [TYP]
Reverse Current IR [mA]
10
Tc=100C [TYP]
Tc=75C [TYP] 1
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
50
60
Reverse Voltage VR [V]
D5S6M
15
Reverse Power Dissipation
DC D=0.05 0.1 0.2
Reverse Power Dissipation PR [W]
10
0.3
0.5
5 SIN 0.8
0
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
DE5S6M
6
Forward Power Dissipation
Forward Power Dissipation PF [W]
5 D=0.8 4 0.2 3 0.05 2 0.1 0.3 SIN 0.5
DC
1
0
0
1
2
3
4
5
6
7
8
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
DE5S6M
10
Derating Curve
Average Rectified Forward Current IO [A]
8
DC D=0.8
6
0.5 SIN 0.3
4
0.2 0.1
2
0.05
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
DE5S6M
5
Derating Curve
Alumina substrate
Average Rectified Forward Current IO [A]
DC 4 D=0.8
Alumina base Soldering land (leads) 1.5mm x 2.5mm Soldering land (heatsink) 7mm Conductor layer 20m Substrate thickness 0.64mm
3
0.5 SIN 0.3
2
0.2 0.1
1
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
DE5S6M
1
Derating Curve
Average Rectified Forward Current IO [A]
Self-supported 0.8
Glass-epoxy substrate Soldering land 2mm Lead length 9.5mm PCB thickness 1.6mm
0.6 DC D=0.8 SIN 0.2
0.4
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
DE5S6M
150
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=125C before surge current is applied 100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP

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